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- Title
Problem of fabrication of diamond-based high-power microwave FETs.
- Authors
Garber, G.; Dorofeev, A.; Zubkov, A.; Kolkovskii, Yu.; Kontsevoi, Yu.; Zyablyuk, K.; Mityagin, A.; Talipov, N.; Chucheva, G.
- Abstract
Numerical experiments are used to plan the development of diamond-based microwave FETs with an output power of 2.5 W per 1 mm of the gate width at a frequency of 15 GHz. A family of the I-V characteristics of the Schottky-barrier FET with gate length L = 50 nm and width W = 1 mm is calculated. Bases on analogy with a TGF2023-20 GaN HEMT, the topology of the high-power diamond transistor (parallel cells with gate widths W = 1.2 mm and 24 elementary gates per cell) is constructed.
- Subjects
FABRICATION (Manufacturing); FIELD-effect transistors; SCHOTTKY barrier; SEMICONDUCTOR-metal boundaries; MICROWAVE devices
- Publication
Journal of Communications Technology & Electronics, 2014, Vol 59, Issue 4, p379
- ISSN
1064-2269
- Publication type
Article
- DOI
10.1134/S106422691403005X