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- Title
High-efficiency UV LEDs using quaternary InAlGaN.
- Authors
Hirayama, Hideki; Kyono, Takashi; Akita, Katsushi; Nakamura, Takao; Ishibashi, Koji
- Abstract
High-efficiency ultraviolet (UV) light sources are very attractive for application to the medical field, white lighting, high-density memories, and so on. We have demonstrated that 300- to 370-nm UV emission is considerably enhanced by the introduction of several percent of In into AlGaN due to an In-segregation effect. We fabricated 310-nm-band UV LEDs with quaternary InAlGaN emitting layers on a sapphire substrate and obtained submilliwatt output power. We also fabricated 350-nm-band InAlGaN-based quantum-well LEDs on GaN substrates in order to eliminate the effects of threading dislocations. The maximum UV output power obtained was as high as 7.4 mW under room-temperature CW operation. The maximum external quantum efficiency (EQE) was 1.1% with an injection current of 50 mA, which is the highest EQE ever obtained for 350-nm-band UV LEDs with top-emission geometry. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 157(3): 43–51, 2006; Published online in Wiley InterScience (<URL>www.interscience.wiley.com</URL>). DOI 10.1002/eej.20287 Copyright © 2006 Wiley Periodicals, Inc.
- Subjects
LIGHT sources; ULTRAVIOLET radiation; SUBSTRATE noise; EMISSION exposure; ELECTRIC lighting; ELECTRONICS
- Publication
Electrical Engineering in Japan, 2006, Vol 157, Issue 3, p43
- ISSN
0424-7760
- Publication type
Article
- DOI
10.1002/eej.20287