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- Title
The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er 3+ -Doped Ga 2 O 3 Thin Films.
- Authors
Liang, Yuanlin; Chen, Haisheng; Dong, Dianmeng; Guo, Jiaxing; Du, Xiaona; Bian, Taiyu; Zhang, Fan; Wu, Zhenping; Zhang, Yang
- Abstract
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga2O3 still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature-grown amorphous Ga2O3 demonstrates comparable performance with its crystalline counterparts. Lanthanide Er3+-doped Ga2O3 (Ga2O3: Er) possesses great potential for developing light-emitting devices, photodetectors, solid-state lasers, and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here, we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga2O3: Er thin films. Through controlling the growth temperature of Ga2O3: Er films, the upconversion luminescence of crystalline Ga2O3: Er thin film is strongly enhanced over 100 times that of the amorphous Ga2O3: Er thin film. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga2O3: Er thin films. These results will aid further designs of favorable optoelectronic devices integrated with lanthanide-doped Ga2O3 thin films.
- Subjects
THIN films; OPTOELECTRONIC devices; WIDE gap semiconductors; PHOTON upconversion; LUMINESCENCE; OPTICAL waveguides
- Publication
Energies (19961073), 2024, Vol 17, Issue 6, p1397
- ISSN
1996-1073
- Publication type
Article
- DOI
10.3390/en17061397