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- Title
Multiwell laser heterostructures fabricated by liquid-phase epitaxy.
- Authors
Leshko, A. Yu.; Lyutetskiı, A. V.; Murashova, A. V.; Pikhtin, N. A.; Tarasov, I. S.; Arsent’ev, I. N.; Ber, B. Ya.; Kudryavtsev, Yu. A.; Il’in, Yu. V.; Fetisova, N. V.
- Abstract
A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distribution profiles of the composition of multiwell laser heterostructures. Liquidphase epitaxy was used to fabricate InGaAsP/InP multiwell laser heterostructures with active regions having emission wavelengths of 1.3 and 1.55 µm and their radiative characteristics were studied.
- Subjects
HETEROSTRUCTURES; EPITAXY; DIODES
- Publication
Technical Physics Letters, 1998, Vol 24, Issue 11, p854
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1262291