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- Title
Large-Scale β -Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage.
- Authors
He, Hao; Zhou, Xinlong; Liu, Yinchi; Liu, Wenjing; Yang, Jining; Zhang, Hao; Xie, Genran; Liu, Wenjun
- Abstract
β-Ga2O3 Schottky barrier diodes (SBDs) suffer from the electric field crowding and barrier height lowering effect, resulting in a low breakdown voltage (BV) and high reverse leakage current. Here, we developed β-Ga2O3 trench MOS-type Schottky barrier diodes (TMSBDs) on β-Ga2O3 single-crystal substrates with halide vapor phase epitaxial layers based on ultraviolet lithography and dry etching. The 1 / C 2 − V plots are deflected at 2.24 V, which is caused by the complete depletion in the mesa region of the TMSBDs. A close-to-unity ideality factor of 1.02 and a low turn-on voltage of 0.72 V are obtained. This is due to the low interface trap density in the metal/semiconductor interface of TMSBDs, as confirmed by the current–voltage ( I – V ) hysteresis measurements. The specific on-resistance calculated with the actual Schottky contact area increases as the area ratio ( A R ) increases because of the current spreading phenomenon. Furthermore, the reverse leakage current of the TMSBDs is smaller and the BV is increased by 120 V compared with the regular SBD. This work paves the way for further improving the overall performance of β-Ga2O3 TMSBDs.
- Subjects
SCHOTTKY barrier diodes; BREAKDOWN voltage; STRAY currents; ULTRAVIOLET lithography; SEMICONDUCTOR junctions; VOLTAGE
- Publication
Electronics (2079-9292), 2023, Vol 12, Issue 20, p4315
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics12204315