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- Title
Fabrication and Reliability Analysis of Nanoscale Magnetic Tunnel Junctions.
- Authors
Wang, Yubo; Zhao, Dongyan; Chen, Yanning; Fu, Zhen; Zhang, Haifeng; Zhou, Zhimei; Wan, Yong; Pan, Cheng; Liu, Fang; Yuan, Yuandong; Cao, Kaihua
- Abstract
Magnetic tunnel junction with perpendicular magnetic anisotropy (p-MTJ) is the core component in spintronics-based memory, logic and sense devices, the synthetic anti-ferromagnetic (SAF) has been used to fix the reference layer and cancel the stray field in free layer and few works report the SAF-based reliability analysis of p-MTJ nanopillars. Here, we developed a complete set of method for single p-MTJ devices using CMOS compatible process, and manufactured 80-nm diameter p-MTJs with lower performance degrade. The results of our p-MTJs also revealed that anomalous transitions in major resistance versus external magnetic field (R − H) curves can be assisted with the uncompensated SAF flipping after nanofabrication, even though well magnetostatic matched during film stack design. We have also given a reliability analysis of magnetization states in anomalous major R − H curves and implied that SAF parameters must be designed for etched nanopillars.
- Subjects
MAGNETIC tunnelling; COMPLEMENTARY metal oxide semiconductors; MAGNETIC fields; SPIN transfer torque; PERPENDICULAR magnetic anisotropy; ANOMALOUS Hall effect; LOGIC devices
- Publication
SPIN (2010-3247), 2021, Vol 11, Issue 1, pN.PAG
- ISSN
2010-3247
- Publication type
Article
- DOI
10.1142/S2010324721500028