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- Title
Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process.
- Authors
Luo, Jialin; Fan, Yihui; Wan, Jing; Sun, Xuming; Liang, Xiaoxin
- Abstract
This paper presents an ultra-wideband transformer feedback (TFB) monolithic microwave integrated circuit (MMIC) power amplifier (PA) developed using a 0.25 μm gallium nitride (GaN) process. To broaden the bandwidth, a drain-to-gate TFB technique is employed in this PA design, achieving a 117% relative −3 dB bandwidth, extending from 5.4 GHz to 20.3 GHz. At a 28 V supply, the designed PA circuit achieves an output power of 25.5 dBm and a 14 dB small-signal gain in the frequency range of 6 to 19 GHz. Within the 6 to 19 GHz frequency range, the small-signal gain exhibits a flatness of less than 0.78 dB. The PA chip occupies an area of 1.571 mm2. This work is the first to design a power amplifier with on-chip transformer feedback in a compound semiconductor MMIC process, and it enables the use of the widest bandwidth power amplifier on-chip transformer matching network.
- Subjects
MONOLITHIC microwave integrated circuits; POWER amplifiers; ON-chip transformers; GALLIUM nitride; COMPOUND semiconductors; TRANSMISSION line theory
- Publication
Micromachines, 2024, Vol 15, Issue 4, p546
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi15040546