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- Title
Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications.
- Authors
Lee, Ming-Wen; Lin, Yueh-Chin; Hsu, Heng-Tung; Gamiz, Francisco; Chang, Edward-Yi
- Abstract
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which have 50-μm, 25-μm, 10-μm, and 5-μm partial gate widths, respectively, the four-etched-fin gate AlGaN/GaN HEMT devices have demonstrated optimized device linearity with respect to the extrinsic transconductance ( G m ) value, the output third order intercept point (OIP3), and the third-order intermodulation output power (IMD3) level. The IMD3 is improved by 7 dB at 30 GHz for the 4 × 50 μm HEMT device. The OIP3 is found to reach a maximum value of 36.43 dBm with the four-etched-fin device, which exhibits high potential for the advancement of wireless power amplifier components for Ka band applications.
- Subjects
MODULATION-doped field-effect transistors; GALLIUM nitride; POWER amplifiers
- Publication
Micromachines, 2023, Vol 14, Issue 5, p931
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi14050931