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- Title
Improvement in Figure of Merit by Doping for Squeezed State Generation in GaAs.
- Authors
Sen, Pratima
- Abstract
A simplistic theoretical investigation based upon the free electron model of optical nonlinearities has been made to establish the superiority of a doped semiconductor over its intrinsic counterpart in efficient squeezed state generation. Choice of Doping level at a given operating frequency regime has to be carefully choosen to avoid free carrier absorption and scattering losses. The relevant figure of merit is found to favor a doped crystal duly shined by off-resonant low frequency laser as a potential scheme to achieve significant quadrature variance. Numerical calculations have been made for GaAs sample irradiated with 10.6 µm pulsed CO[sub 2] laser of intensity ∼1.6 x 10² GW/m².
- Subjects
SEMICONDUCTOR doping; GALLIUM arsenide
- Publication
Journal of Nonlinear Optical Physics & Materials, 2001, Vol 10, Issue 4, p377
- ISSN
0218-8635
- Publication type
Article
- DOI
10.1142/S0218863501000772