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- Title
Crystal orientation effects on electronic and optical properties of wurtzite ZnO/MgZnO quantum well lasers.
- Authors
Seoung-Hwan Park; Doyeol Ahn
- Abstract
Crystal orientation effects on electronic and optical properties of ZnO/MgZnO QW structures are investigated by taking into account the non-Markovian gain model with many-body effects. These results are compared with those for GaN-based QW structures. In a range of small crystal angles, ZnO/MgZnO QW structures have a lower internal field than GaN/AlGaN and InGaN/GaN QW structures. However, ZnO/MgZnO QW structures show a larger internal field than GaN-based QW structures at crystal angles near $${\theta =50^{\circ}}$$ . The WZ ZnO/MgZnO QW structures are shown to have much larger optical gain than the GaN-based QW structures for small crystal angles. This is because WZ ZnO/MgZnO QW structures have larger matrix element and smaller effective masses than InGaN/GaN QW structures near the (0001) crystal orientation. On the other hand, in the case of the (10 $${\bar{1}}$$ 0) crystal orientation, the optical gain of ZnO/MgZnO QW structures becomes smaller than that of InGaN/GaN QW structures due to the increase of the effective mass. In addition, the ZnO/MgZnO QW structures have a maximum in the optical gain near $${\theta =50^{\circ}}$$ , which can be explained by the fact that the average hole effective mass increases although the matrix element at high carrier density is improved with increasing crystal angle.
- Subjects
ENERGY-band theory of solids; OPTICAL properties; QUANTUM wells; OPTOELECTRONIC devices; NUMERICAL analysis; MATHEMATICAL analysis
- Publication
Optical & Quantum Electronics, 2006, Vol 38, Issue 12-14, p935
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-006-9007-y