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- Title
ON THE ASTM ELECTROMIGRATION TEST STRUCTURE APPLIED TO A1-1%Si/TiN/Ti BAMBOO METAL LINES.
- Authors
Munari, Ilaria De; Vanzi, Massimo; Scorzoni, Andrea; Fanitni, Fausio
- Abstract
The applicability of NIST-ASTM electromigration test patterns when used to test bamboo' metal Lines is discussed. Wafer level tests on passivated and non-passivated samples employing the A1- 1%Si/TiN/Ti metallization scheme were performed. Straight metal lines 1000 μm long and 0.9 μm or 1.4 μm wide were tested at two different current densities. j = 3 MA/cm² and j = 4.5 MA/cm² at constant stress temperature (T= 230°C). The failures mainly occurred in the end-segment areas and hindered the evaluation of the electromigration resistance of the 'bamboo' test lines. In order to avoid this problems. completely different test patterns based on different approaches must be designed.
- Subjects
ELECTRODIFFUSION; SEMICONDUCTORS; PHYSICAL metallurgy; TEMPERATURE; THERMAL properties; BAMBOO
- Publication
Quality & Reliability Engineering International, 1995, Vol 11, Issue 1, p33
- ISSN
0748-8017
- Publication type
Article
- DOI
10.1002/qre.4680110106