We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Dependence of Irradiated High-Power Electromagnetic Waves on the Failure Threshold Time of Semiconductors Using a Closed Waveguide.
- Authors
Min, Sun-Hong; Kim, Jung-Il; Sattorov, Matlabjon; Kim, Seontae; Hong, Dongpyo; Kim, Seonmyeong; Hong, Bong-Hwan; Park, Chawon; Ma, Sukhwal; Kim, Minho; Lee, Kyo-Chul; Lee, Yong-Jin; Kwon, Han-Byul; Yoo, Young-Joon; Park, Sang-Yoon; Park, Gun-Sik
- Abstract
The failure threshold time of semiconductors caused by the impact of irradiated high-power electromagnetic waves (HPEM) is experimentally studied. A SN7442 integrated circuit (IC) is placed in an emulator with a WR430 closed waveguide and is irradiated by HPEM generated from a magnetron oscillator. The state of the SN7442 component is observed by a light-emitting diode (LED) detector and the voltage measured in the SN7442 component. As the magnitude of the electric field in the HPEM is varied from 24 kV/m to 36 kV/m, the failure threshold time falls from 195 s to 17 s with dependence of the irradiated electric field (E) on the failure threshold time (T) from T~E−12 to a T~E−6.
- Subjects
ELECTROMAGNETIC waves; TIME management; ELECTRIC fields; LIGHT emitting diodes; INTEGRATING circuits
- Publication
Electronics (2079-9292), 2021, Vol 10, Issue 16, p1884
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics10161884