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- Title
Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces.
- Authors
Kobayashi, Atsushi; Okubo, Kana; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi
- Abstract
We have found that polarity of epitaxial InN layers has been controlled by choice of a capping material during high-temperature annealing of yttria-stabilized zirconia (YSZ) (111) substrates in air. Angle-resolved X-ray photoelectron spectroscopy has revealed that the amount of segregation of Y atoms to the YSZ surface depended on the capping material of the substrates. In-polar and N-polar InN have been reproducibly grown on Y-segregated and Y-segregation-free YSZ surfaces, respectively. We have also found that the growth of the first monolayer (ML) of N-polar InN proceeds in a step-flow mode which then switches to layer-by-layer mode after the coverage by 1-ML-thick InN.
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2012, Vol 209, Issue 11, p2251
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201228287