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- Title
Read-decoupled 8T1R non-volatile SRAM with dual-mode option and high restore yield.
- Authors
Zhiting Lin; Yong Wang; Chunyu Peng; Wenjuan Lu; Xuan Li; Xiulong Wu; Junning Chen
- Abstract
This Letter proposes a read-decoupled (RD) and average 8T1R non-volatile static RAM(SRAM), RD-8T1R. It uses only one memristor to achieve 2× store energy reduction and higher restore yield compared with other two memristors based non-volatile SRAMs. In addition, this structure can offer two alternative SRAM modes unlike previously known non-volatile SRAMs, i.e. a high speed and a stable mode. Compared with existing technologies, the simulation results in TSMC-65 nm show that the proposed scheme provides a remarkable restore yield. There are ~154% improvement in the read static noise margin (@typical–typical (@TT) corner and stable mode) and ~23% improvement in the read delay (@TT corner and high speed mode) compared with the previous 6T/7T/8 T non-volatile SRAMs.
- Subjects
STATIC random access memory; RANDOM access memory; MEMRISTORS; ELECTRIC resistors; SIMULATION methods &; models
- Publication
Electronics Letters (Wiley-Blackwell), 2019, Vol 55, Issue 9, p519
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2019.0295