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- Title
Fabrication of composite based on GeSi with Ag nanoparticles using ion implantation.
- Authors
Batalov, R.; Vorobev, V.; Nuzhdin, V.; Valeev, V.; Bayazitov, R.; Lyadov, N.; Osin, Yu.; Stepanov, A.
- Abstract
Comparative analysis of the structural and optical properties of composite layers fabricated with the aid of implantation of single-crystalline silicon ( c-Si) using Ge (40 keV/1 × 10 ions/cm) and Ag (30 keV/1.5 × 10 ions/cm) ions and sequential irradiation using Ge and Ag ions is presented. The implantation of the Ge ions leads to the formation of Ge: Si fine-grain amorphous surface layer with a thickness of 60 nm and a grain size of 20-40 nm. The implantation of c-Si using Ag ions results in the formation of submicron porous amorphous a-Si structure with a thickness of about 50 nm containing ion-synthesized Ag nanoparticles. The penetration of the Ag ions in the Ge: Si layer stimulates the formation of pores with Ag nanoparticles with more uniform size distribution. The reflection spectra of the implanted Ag: Si and Ag: GeSi layers exhibit a sharp decrease in the intensity in the UV (220-420 nm) spectral interval relative to the intensity of c-Si by more than 50% owing to the amorphization and structuring of surface. The formation of Ag nanoparticles in the implanted layers gives rise to a selective band of the plasmon resonance at a wavelength of about 820 nm in the optical spectra. Technological methods for fabrication of a composite based on GeSi with Ag nanoparticles are demonstrated in practice.
- Subjects
GERMANIUM; SILICON; SILVER nanoparticles; ION implantation; COMPARATIVE studies; COMPOSITE materials
- Publication
Technical Physics, 2016, Vol 61, Issue 12, p1861
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784216120069