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Temperature characteristics of tilted wave lasers.
Published in:
Optical Engineering, 2016, v. 55, n. 11, p. 116102-1, doi. 10.1117/1.OE.55.11.116102
By:
- Maximov, Mikhail V.;
- Gordeev, Nikita Yu.;
- Shernyakov, Yuri M.;
- Payusov, Alexey S.;
- Kalyuzhnyy, Nikolay A.;
- Mintairov, Sergey A.;
- Kulagina, Marina M.;
- Zhukov, Alexey E.;
- Shchukin, Vitaly A.;
- Ledentsov, Nikolai N.
Publication type:
Article
Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers.
Published in:
Semiconductors, 2023, v. 57, n. 13, p. 604, doi. 10.1134/S1063782623030120
By:
- Maximov, M. V.;
- Shernyakov, Yu. M.;
- Kornyshov, G. O.;
- Simchuk, O. I.;
- Gordeev, N. Yu.;
- Beckman, A. A.;
- Payusov, A. S.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Kulagina, M. M.;
- Zhukov, A. E.
Publication type:
Article
Internal Loss in Diode Lasers with Quantum Well-Dots.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 513, doi. 10.1134/S1063782623090191
By:
- Zhukov, A. E.;
- Nadtochiy, A. M.;
- Kryzhanovskaya, N. V.;
- Shernyakov, Yu. M.;
- Gordeev, N. Yu.;
- Serin, A. A.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Payusov, A. S.;
- Kornyshov, G. O.;
- Maximov, M. V.;
- Wang, Y.
Publication type:
Article
Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots.
Published in:
Semiconductors, 2023, v. 57, n. 12, p. 539, doi. 10.1134/S1063782623080079
By:
- Kornyshov, G. O.;
- Gordeev, N. Yu.;
- Shernyakov, Yu. M.;
- Beckman, A. A.;
- Payusov, A. S.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Maximov, M. V.
Publication type:
Article
Thermal Resistance Measurement of Edge-Emitting Semiconductor Lasers Using Spontaneous Emission Spectra.
Published in:
Semiconductors, 2023, v. 57, n. 6, p. 310, doi. 10.1134/S1063782623080146
By:
- Payusov, A. S.;
- Beckman, A. A.;
- Kornyshov, G. O.;
- Shernyakov, Yu. M.;
- Maximov, M. V.;
- Gordeev, N. Yu.
Publication type:
Article
Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots.
Published in:
Semiconductors, 2021, v. 55, n. 3, p. 333, doi. 10.1134/S1063782621030167
By:
- Shernyakov, Yu. M.;
- Gordeev, N. Yu.;
- Payusov, A. S.;
- Serin, A. A.;
- Kornyshov, G. O.;
- Nadtochiy, A. M.;
- Kulagina, M. M.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Lateral Mode Tuning in Coupled Ridge Waveguides Using Focused Ion Beam.
Published in:
Semiconductors, 2020, v. 54, n. 14, p. 1811, doi. 10.1134/S1063782620140237
By:
- Payusov, A. S.;
- Serin, A. A.;
- Kornyshov, G. O.;
- Kulagina, M. M.;
- Mitrofanov, M. I.;
- Voznyuk, G. V.;
- Evtikhiev, V. P.;
- Maximov, M. V.;
- Gordeev, N. Yu.
Publication type:
Article
Parasitic Recombination in a Laser with Asymmetric Barrier Layers.
Published in:
Semiconductors, 2020, v. 54, n. 3, p. 366, doi. 10.1134/S1063782620030203
By:
- Zubov, F. I.;
- Muretova, M. E.;
- Payusov, A. S.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Asryan, L. V.
Publication type:
Article
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm).
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1699, doi. 10.1134/S1063782619160218
By:
- Nadtochiy, A. M.;
- Shernyakov, Yu. M.;
- Kulagina, M. M.;
- Payusov, A. S.;
- Gordeev, N. Yu.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Denneulin, T.;
- Cherkashin, N.;
- Shchukin, V. A.;
- Ledentsov, N. N.
Publication type:
Article
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1405, doi. 10.1134/S1063782619100087
By:
- Gordeev, N. Yu.;
- Payusov, A. S.;
- Maximov, M. V.
Publication type:
Article
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance.
Published in:
Semiconductors, 2019, v. 53, n. 2, p. 200, doi. 10.1134/S1063782619020106
By:
- Gordeev, N. Yu.;
- Payusov, A. S.;
- Mukhin, I. S.;
- Serin, A. A.;
- Kulagina, M. M.;
- Guseva, Yu. A.;
- Shernyakov, Yu. M.;
- Zadiranov, Yu. M.;
- Maximov, M. V.
Publication type:
Article
Diode Lasers with Near-Surface Active Region.
Published in:
Semiconductors, 2018, v. 52, n. 14, p. 1901, doi. 10.1134/S1063782618140233
By:
- Payusov, A. S.;
- Gordeev, N. Yu.;
- Serin, A. A.;
- Kulagina, M. M.;
- Kalyuzhnyy, N. A.;
- Mintairov, S. A.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1462, doi. 10.1134/S1063782618110283
By:
- Zhukov, A. E.;
- Gordeev, N. Yu.;
- Shernyakov, Yu. M.;
- Payusov, A. S.;
- Serin, A. A.;
- Kulagina, M. M.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Maximov, M. V.
Publication type:
Article
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 10, p. 1311, doi. 10.1134/S1063782618100093
By:
- Maximov, M. V.;
- Nadtochiy, A. M.;
- Shernyakov, Yu. M.;
- Payusov, A. S.;
- Vasil’ev, A. P.;
- Ustinov, V. M.;
- Serin, A. A.;
- Gordeev, N. Yu.;
- Zhukov, A. E.
Publication type:
Article
Spectral dependence of the linewidth enhancement factor in quantum dot lasers.
Published in:
Semiconductors, 2013, v. 47, n. 12, p. 1656, doi. 10.1134/S1063782613120233
By:
- Zubov, F. I.;
- Shernyakov, Yu. M.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Livshits, D. A.;
- Payusov, A. S.;
- Nadtochiy, A. M.;
- Savelyev, A. V.;
- Kryzhanovskaya, N. V.;
- Gordeev, N. Yu.
Publication type:
Article
Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1308, doi. 10.1134/S106378261010012X
By:
- Shatalina, E. S.;
- Blokhin, S. A.;
- Nadtochy, A. M.;
- Payusov, A. S.;
- Savelyev, A. V.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Ledentsov, N. N.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ustinov, V. M.
Publication type:
Article
A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes.
Published in:
Semiconductors, 2010, v. 44, n. 10, p. 1357, doi. 10.1134/S1063782610100192
By:
- Gordeev, N. Yu.;
- Novikov, I. I.;
- Kuznetsov, A. M.;
- Shernyakov, Yu. M.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Chunareva, A. V.;
- Payusov, A. S.;
- Livshits, D. A.;
- Kovsh, A. R.
Publication type:
Article
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K).
Published in:
Semiconductors, 2009, v. 43, n. 5, p. 680, doi. 10.1134/S1063782609050261
By:
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Shernyakov, Yu. M.;
- Gordeev, N. Yu.;
- Payusov, A. S.;
- Maximov, M. V.;
- Mikhrin, S. S.;
- Lifshits, M. B.;
- Shchukin, V. A.;
- Kop'ev, P. S.;
- Ledentsov, N. N.;
- Bimberg, D.
Publication type:
Article
Progress of Edge-Emitting Diode Lasers Based on Coupled-Waveguide Concept.
Published in:
Micromachines, 2023, v. 14, n. 6, p. 1271, doi. 10.3390/mi14061271
By:
- Han, Lili;
- Wang, Zhaowei;
- Gordeev, Nikita Yu.;
- Maximov, Mikhail V.;
- Tang, Xiansheng;
- Beckman, Artem A.;
- Kornyshov, Grigoriy O.;
- Payusov, Alexey S.;
- Shernyakov, Yuri M.;
- Zhukov, Alexey E.;
- Li, Kuilong;
- Zhai, Ruizhan;
- Jia, Zhongqing;
- Yang, He;
- Zhang, Wei
Publication type:
Article
Effect of structural design on the optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices.
Published in:
Technical Physics Letters, 2008, v. 34, n. 2, p. 146, doi. 10.1134/S1063785008020181
By:
- Mamutin, V. V.;
- Egorov, A. Yu.;
- Kryzhanovskaya, N. V.;
- Nadtochy, A. M.;
- Payusov, A. S.
Publication type:
Article
Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers.
Published in:
Technical Physics Letters, 2023, v. 49, p. S288, doi. 10.1134/S1063785023010285
By:
- Payusov, A. S.;
- Mitrofanov, M. I.;
- Kornyshov, G. O.;
- Serin, A. A.;
- Voznyuk, G. V.;
- Kulagina, M. M.;
- Evtikhiev, V. P.;
- Gordeev, N. Yu.;
- Maximov, M. V.;
- Breuer, S.
Publication type:
Article
Generation of Picosecond Pulses by Lasers with Distributed Feedback at a Wavelength of 1064 nm.
Published in:
Technical Physics Letters, 2020, v. 46, n. 4, p. 316, doi. 10.1134/S1063785020040069
By:
- Gadzhiev, I. M.;
- Buyalo, M. S.;
- Payusov, A. S.;
- Bakshaev, I. O.;
- Kolykhalova, E. D.;
- Portnoi, E. L.
Publication type:
Article
Specific Features of the Current–Voltage Characteristic of Microdisk Lasers Based on InGaAs/GaAs Quantum Well-Dots.
Published in:
Technical Physics Letters, 2019, v. 45, n. 10, p. 994, doi. 10.1134/S1063785019100158
By:
- Zubov, F. I.;
- Moiseev, E. I.;
- Kornyshov, G. O.;
- Kryzhanovskaya, N. V.;
- Shernyakov, Yu. M.;
- Payusov, A. S.;
- Kulagina, M. M.;
- Kalyuzhnyi, N. A.;
- Mintairov, S. A.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges.
Published in:
Technical Physics Letters, 2019, v. 45, n. 2, p. 163, doi. 10.1134/S1063785019020305
By:
- Nadtochiy, A. M.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Shernyakov, Yu. M.;
- Kornyshov, G. O.;
- Serin, A. A.;
- Payusov, A. S.;
- Nevedomsky, V. N.;
- Gordeev, N. Yu.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer.
Published in:
Technical Physics Letters, 2018, v. 44, n. 11, p. 965, doi. 10.1134/S1063785018110068
By:
- Gadzhiyev, I. M.;
- Buyalo, M. S.;
- Payusov, A. S.;
- Gubenko, A. E.;
- Mikhrin, S. S.;
- Nevedomsky, V. N.;
- Portnoi, E. L.
Publication type:
Article
Power Characteristics and Temperature Dependence of the Angular Beam Divergence of Lasers with a Near-Surface Active Region.
Published in:
Technical Physics Letters, 2018, v. 44, n. 8, p. 675, doi. 10.1134/S1063785018080151
By:
- Zhukov, A. E.;
- Gordeev, N. Yu.;
- Shernyakov, Yu. M.;
- Payusov, A. S.;
- Serin, A. A.;
- Kulagina, M. M.;
- Mintairov, S. A.;
- Kalyuzhnyi, N. A.;
- Maksimov, M. V.
Publication type:
Article
High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm.
Published in:
Technical Physics Letters, 2008, v. 34, n. 12, p. 1008, doi. 10.1134/S1063785008120055
By:
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Maksimov, M. V.;
- Zhukov, A. E.;
- Shernyakov, Yu. M.;
- Ustinov, V. M.;
- Kryzhanovskaya, N. V.;
- Payusov, A. S.;
- Krestnikov, I. L.;
- Lifshits, D. A.;
- Mikhrin, S. S.;
- Kovsh, A. R.
Publication type:
Article
Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology.
Published in:
Progress in Photovoltaics, 2016, v. 24, n. 9, p. 1261, doi. 10.1002/pip.2789
By:
- Kalyuzhnyy, Nikolay A.;
- Mintairov, Sergey A.;
- Salii, Roman A.;
- Nadtochiy, Alexey M.;
- Payusov, Alexey S.;
- Brunkov, Pavel N.;
- Nevedomsky, Vladimir N.;
- Shvarts, Maxim Z.;
- Martí, Antonio;
- Andreev, Viacheslav M.;
- Luque, Antonio
Publication type:
Article
Light Emitting Devices Based on Quantum Well-Dots.
Published in:
Applied Sciences (2076-3417), 2020, v. 10, n. 3, p. 1038, doi. 10.3390/app10031038
By:
- Maximov, Mikhail V.;
- Nadtochiy, Alexey M.;
- Mintairov, Sergey A.;
- Kalyuzhnyy, Nikolay A.;
- Kryzhanovskaya, Natalia V.;
- Moiseev, Eduard I.;
- Gordeev, Nikita Yu.;
- Shernyakov, Yuriy M.;
- Payusov, Alexey S.;
- Zubov, Fedor I.;
- Nevedomskiy, Vladimir N.;
- Rouvimov, Sergei S.;
- Zhukov, Alexey E.
Publication type:
Article
Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers.
Published in:
Photonics, 2023, v. 10, n. 10, p. 1090, doi. 10.3390/photonics10101090
By:
- Maximov, Mikhail V.;
- Gordeev, Nikita Yu.;
- Shernyakov, Yuri M.;
- Kornyshov, Grigoriy O.;
- Beckman, Artem A.;
- Payusov, Alexey S.;
- Mintairov, Sergey A.;
- Kalyuzhnyy, Nikolay A.;
- Kulagina, Marina M.;
- Zhukov, Alexey E.
Publication type:
Article

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