We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Electrical Characterization of GaN.
- Authors
Naz, Nazir A.; Suleman, M.; Ali, Akbar
- Abstract
GaN based blue light emitting diodes were characterized, using deep level transient spectroscopy technique. Nine defects having ionization energies: 0.06, 0.08, 0.09, 0.14, 0.10, 0.14, 0.14, 0.16 and 0.65 eV and corresponding capture cross-sections (s8 )4.0 x 10-14, 1.3 x 10-13, 7.6 x 10-14, 6.95 x 10-13, 3.53 x 10-14, 1.6 x 10-13, 8.0 x 10-14, 7.34 x 10-14 and 1.8 x 10-5 cm² were identified. Respective concentrations were found to be 8.81 x 1013, 8.56 x 1013, 8.90 x 1013, 8.68 x 1013, 8.62 x 1013, 8.56 x 1013, 8.66 x 1013, 8.57 x 1013, 8.54 x 1013, 8.68 x 1014, and 8.46 x 1014 cm-3.
- Subjects
OPTICAL properties of gallium nitride; OPTICAL properties of semiconductors; DEEP level transient spectroscopy; IONIZATION energy; SPECTRUM analysis
- Publication
PIERS Proceedings, 2014, p1975
- ISSN
1559-9450
- Publication type
Article