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- Title
On the fine structure of spectra of the inelastic-electron-scattering cross section and the Si surface parameter.
- Authors
Parshin, A.; Igumenov, A.; Mikhlin, Yu.; Pchelyakov, O.; Nikiforov, A.; Timofeev, V.
- Abstract
Reflection electron-energy loss spectra are obtained for a series of Si samples with different crystallographic orientations, prepared under different technological conditions. Using the experimental spectra, the electron energy loss dependences of the product of the mean inelastic free path and differential inelastic electron scattering cross section are calculated. A new technique is suggested for analyzing the spectra of inelastic electron scattering cross section by simulating experimental spectra with the use of the three-parameter Tougaard universal cross section functions. The results of the simulation are used to determine the nature of loss peaks and to calculate the surface parameter.
- Subjects
INELASTIC electron scattering; SILICON; CRYSTALLOGRAPHY; SEMICONDUCTORS; KLEIN paradox; REFLECTION electron energy loss spectroscopy; ELECTRON microscopy
- Publication
Semiconductors, 2015, Vol 49, Issue 4, p423
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S106378261504017X