We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Thermoelectric Properties of Half-Heusler Bismuthides ZrCo<sub>1-x</sub>Ni<sub>x</sub>Bi (x = 0.0 to 0.1).
- Authors
Ponnambalam, V.; Bo Zhang; Tritt, Terry M.; Poon, S. Joseph
- Abstract
The usefulness of half-Heusler (HH) alloys as thermoelectrics has been mainly limited by their relatively large thermal conductivity, which is a key issue despite their high thermoelectric power factors. In this regard, Bi-containing half-Heusler alloys are particularly appealing, because they are, potentially, of low thermal conductivity. One such a material is ZrCoBi. We prepared pure and Ni-doped ZrCoBi by a solid-state reaction. To evaluate thermoelectric potential we measured electrical resistivity (ρ = 1/σ) and thermopower (σ) up to 1000 K and thermal conductivity (κ) up to 300 K. Our measurements indicate that for these alloys resistivity of approximately a few mΩ cm and thermopower larger than a hundred µV K-1 are possible. Low κ values are also possible. On the basis of these data we conclude that this system has a potential to be optimized further, despite the low power factors (α²σT) we have currently measured.
- Subjects
BISMUTHIDES; THERMOELECTRIC materials; ELECTRIC resistance; THERMAL conductivity; ELECTRICAL engineering materials; THERMOELECTRICITY
- Publication
Journal of Electronic Materials, 2007, Vol 36, Issue 7, p732
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-007-0153-1