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- Title
Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO<sub>2</sub> as Gate Dielectric.
- Authors
Mohanty, Subhajit; Jian, Zhe; Khan, Kamruzzaman; Ahmadi, Elaheh
- Abstract
While SiN has been the choice of dielectric for N-polar GaN high electron mobility transistors (HEMTs), high-k dielectrics need to be explored for thin-channel HEMTs to further increase the frequency of operation. In this work, we report N-polar metal-insulator-semiconductor (MIS)-HEMTs with atomic layer deposited HfO2 as the gate dielectric. The device with gate width of WG = 2 × 50 μm, gate length of LG = 500 nm, gate-to-source distance of LGS = 400 nm, and gate-to-drain distance of LGD = 1.5 μm demonstrated a maximum drain current of 1 mA/mm with on-resistance of 1.28 Ω mm. A very low gate leakage of 10 nA/mm was measured in the on-state, which increased to 0.2 µA/mm with 11 V gate-drain voltage in the off-state. Pulsed-IV measurement revealed that there are two competing mechanisms at play, resulting in dispersion and anti-dispersion at the same time. The device demonstrated higher breakdown voltage compared to N-polar HEMTS with in situ metal–organic chemical vapor deposition SiN dielectric with similar two-dimensional electron gas (2DEG) concentration. An fT/fmax of 19.1/69.5 GHz was measured on this device.
- Subjects
MODULATION-doped field-effect transistors; TWO-dimensional electron gas; DIELECTRICS; CHEMICAL vapor deposition; GALLIUM nitride; BREAKDOWN voltage
- Publication
Journal of Electronic Materials, 2023, Vol 52, Issue 4, p2596
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-023-10222-2