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- Title
Electric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10-200 kHz.
- Authors
Baraz, Nalan; Yücedağ, İbrahim; Azizian-Kalandaragh, Yashar; Ersöz, Gülçin; Orak, İkram; Altındal, Şemsettin; Akbari, Bashir; Akbari, Hossein
- Abstract
Pure polyvinyl alcohol (PVA) capped ZnS semiconductor nanocrystals were prepared by microwave-assisted method, and the optical and structural properties of the as-prepared materials were characterized by x-ray diffraction (XRD) and Ultraviolet-visible (UV-Vis) techniques. The XRD pattern shows the formation of ZnS nanocrystals, and the UV-Vis spectroscopy results show a blue shift of about 1.2 eV in its band gap due to the confinement of very small nanostructures. The concentration of donor atoms ( N ), diffusion potential ( V ), Fermi energy level ( E ), and barrier height (Φ ( C- V)) values were obtained from the reverse bias C - V plots for each frequency. The voltage dependent profile of series resistance ( R ) and surface states ( N ) were also obtained using admittance and low-high frequency methods, respectively. R - V and N - V plots both have distinctive peaks in the depletion region due to the spatial distribution charge at the surface states. The effect of R and interfacial layer on the C- V and G/ ω- V characteristics was found remarkable at high frequencies. Therefore, the high frequency C- V and G/ ω- V plots were corrected to eliminate the effect of R . The real and imaginary parts of dielectric constant ( ε′ and ε″) and electric modulus ( M′ and M″), loss tangent (tan δ), and ac electrical conductivity ( σ ) were also obtained using C and G/ ω data and it was found that these parameters are indeed strong functions of frequency and applied bias voltage. Experimental results confirmed that the N , R , and interfacial layer of the MPS structure are important parameters that strongly influence both the electrical and dielectric properties. The low values of N (~10 eV cm) and the value of dielectric constant ( ε′ = 1.3) of ZnS-PVA interfacial layer even at 10 kHz are very suitable for electronic devices when compared with the SiO. These results confirmed that the ZnS-PVA considerably improves the performance of Au/n-Si (MS) structure and also allow it to work as a capacitor, which stores electric charges or energy.
- Subjects
POLYVINYL alcohol; NANOCRYSTALS; SEMICONDUCTORS; NANOPARTICLES; CONDENSED matter physics
- Publication
Journal of Electronic Materials, 2017, Vol 46, Issue 7, p4276
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-017-5363-6