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- Title
Light‐Emitting Diodes: Enhanced Brightness and Device Lifetime of Quantum Dot Light‐Emitting Diodes by Atomic Layer Deposition (Adv. Mater. Interfaces 12/2020).
- Authors
Kim, Gi‐Hwan; Noh, Kyeongchan; Han, Jisu; Kim, Minsu; Oh, Nuri; Lee, Woongkyu; Na, Hyon Bin; Shin, Chansun; Yoon, Tae‐Sik; Lim, Jaehoon; Cho, Seong‐Yong
- Abstract
Light-Emitting Diodes: Enhanced Brightness and Device Lifetime of Quantum Dot Light-Emitting Diodes by Atomic Layer Deposition (Adv. Keywords: atomic layer deposition; device lifetime; interfaces; quantum dot light-emitting diodes (QD-LEDs); ZnO EN atomic layer deposition device lifetime interfaces quantum dot light-emitting diodes (QD-LEDs) ZnO 1 1 1 06/25/20 20200623 NES 200623 The atomic layer deposited (ALD) ZnO significantly enhances the luminance and device lifetime of green-emitting quantum dot (QD) light-emitting diodes. Atomic layer deposition, device lifetime, interfaces, quantum dot light-emitting diodes (QD-LEDs), ZnO.
- Subjects
LIGHT emitting diodes; ATOMIC layer deposition; QUANTUM dot devices
- Publication
Advanced Materials Interfaces, 2020, Vol 7, Issue 12, p1
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.202070067