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- Title
Investigation on the corrosive effect of NH<sub>3</sub> during InGaN/GaN multi-quantum well growth in light emitting diodes.
- Authors
Yang, J.; Zhao, D. G.; Jiang, D. S.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Li, X.; Liang, F.; Liu, S. T.; Zhang, L. Q.; Yang, H.
- Abstract
Three series of samples with different NH3 flow rate are grown and the optical and structural properties are investigated. It is found that apart from a positive effect on keeping a high partial pressure of nitrogen to enhance indium incorporation, NH3 may also play a negative effect on indium incorporation during InGaN growth. Especially, when temperature is relatively high, the hydrogen generated from the dissociation of NH3 may suppress the chemical reaction which produces InN, leading to a reduced indium incorporation efficiency during the InGaN layer growth.
- Publication
Scientific Reports, 2017, p44850
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep44850