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- Title
A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes.
- Authors
Ding, K.; Zeng, Y. P.; Wei, X. C.; Li, Z. C.; Wang, J. X.; Lu, H. X.; Cong, P. P.; Yi, X. Y.; Wang, G. H.; Li, J. M.
- Abstract
The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.
- Subjects
ELECTROLUMINESCENCE; LOW temperatures; LIGHT emitting diodes; INDIUM; GALLIUM; AUGER effect
- Publication
Applied Physics B: Lasers & Optics, 2009, Vol 97, Issue 2, p465
- ISSN
0946-2171
- Publication type
Article
- DOI
10.1007/s00340-009-3657-y