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- Title
Manipulation of current rectification in van der Waals ferroionic CuInP<sub>2</sub>S<sub>6</sub>.
- Authors
Jiang, Xingan; Wang, Xueyun; Wang, Xiaolei; Zhang, Xiangping; Niu, Ruirui; Deng, Jianming; Xu, Sheng; Lun, Yingzhuo; Liu, Yanyu; Xia, Tianlong; Lu, Jianming; Hong, Jiawang
- Abstract
Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations. Developing a single-phase self-rectifying memristor is desirable and functionally adaptive to dynamic environmental stimuli variations. Here, the authors report a single phase CuInP2S6 based memristor with continuously tunable current rectifying.
- Subjects
SCHOTTKY barrier; ION migration &; velocity; MEMRISTORS
- Publication
Nature Communications, 2022, Vol 13, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-022-28235-6