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- Title
Novel microwave plasma-assisted CVD reactor for diamond delta doping.
- Authors
Vikharev, A. L.; Gorbachev, A. M.; Lobaev, M. A.; Muchnikov, A. B.; Radishev, D. B.; Isaev, V. A.; Chernov, V. V.; Bogdanov, S. A.; Drozdov, M. N.; Butler, J. E.
- Abstract
We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta-doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra-sharp interfaces between doped and undoped material and minimize the prolonged 'tails' formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer-thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta-layer and multiple delta-layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
- Subjects
DIAMOND crystals; MICROWAVE plasmas; CHEMICAL vapor deposition; CHEMICAL reactors; SEMICONDUCTOR doping; SINGLE crystals
- Publication
Physica Status Solidi - Rapid Research Letters, 2016, Vol 10, Issue 4, p324
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201510453