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- Title
Limiting Effect of Interface States Density on Photoelectric Properties of Sol–Gel n-ZnO/p-Si Heterojunction.
- Authors
Manoua, Mohamed; Fazouan, Nejma; Almaggoussi, Abdelmajid; Kamoun, Najoua; Liba, Ahmed
- Abstract
An n-ZnO/p-Si heterojunction was elaborated using the sol–gel spin-coating technique and simulated by two-dimensional (2D) numerical simulations. The structural, optical, electrical, and photoelectrical properties were investigated. X-ray diffraction (XRD) analysis confirmed the hexagonal würtzite structure of ZnO. Scanning electron microscopy (SEM) analysis revealed a homogeneous granular structure with mean grain size of 71.42 nm. High optical transmittance and low reflectance in the visible range were measured by ultraviolet–visible (UV–Vis) spectrophotometry. Photoluminescence (PL) measurements revealed the presence of VO, VZn, Zni, and OZn intrinsic defects. Hall-effect measurements showed a charge carrier density of 1.29 × 10 19 cm - 3 , mobility of 1.41 × 10 - 2 cm 2 V - 1 s - 1 and resistivity of 34.25 Ω cm in the ZnO layer. Under illumination, the n-ZnO/p-Si structure showed the following photoelectric parameters: JSC = 4.62 × 10–5 A/cm2, Voc = 0.385 V, and fill factor (FF) of 31.45%. Finally, simulations using Atlas Silvaco software revealed the existence of an interface states density of around 5 × 1014 cm–2, which limits the photoelectric performance of the structure.
- Subjects
CARRIER density; ULTRAVIOLET spectrophotometry; HETEROJUNCTIONS; PHOTOELECTRIC effect; SOL-gel processes; DENSITY of states; SCANNING electron microscopy
- Publication
JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2021, Vol 73, Issue 9, p2819
- ISSN
1047-4838
- Publication type
Article
- DOI
10.1007/s11837-021-04769-w