We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs.
- Authors
Efthymiou, Loizos; Camuso, Gianluca; Longobardi, Giorgia; Chien, Terry; Chen, Max; Udrea, Florin
- Abstract
With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed.
- Subjects
ELECTRIC properties of gallium nitride; MODULATION-doped field-effect transistors; ELECTRIC capacity; POWER electronics; ELECTRIC oscillators
- Publication
Energies (19961073), 2017, Vol 10, Issue 3, p407
- ISSN
1996-1073
- Publication type
Article
- DOI
10.3390/en10030407