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- Title
Positive Delayed Photoconductivity in Double Heterostructures Al[sub 0.5]Ga[sub 0.5]As/GaAs/Al[sub 0.5]Ga[sub 0.5]As of the p-Type.
- Authors
Kraak, W.; Minina, N. Ya.; Savin, A. M.; Ilievsky, A. A.; Sorenson, K. B.
- Abstract
Positive delayed photoconductivity was observed for the first time in double p-type heterostructures Al[sub 0.5]Ga[sub 0.5]As/GaAs/Al[sub 0.5]Ga[sub 0.5]As upon exposure to the radiation of a red light-emitting diode. In this state, the concentration and mobility of two-dimensional holes are increased 1.5 and 1.7 times, respectively, as compared to the initial dark values. The delayed photoconductivity can be explained by the presence of deep electron traps located above the Fermi level at the inverted heterointerface.
- Subjects
HETEROSTRUCTURES; PHOTOCONDUCTIVITY
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 6, p527
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1490980