Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.Title1.55–1.6μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots.AuthorsZhukov, A. E.; Volovik, B. V.; Mikhrin, S. S.; Maleev, N. A.; Tsatsul’nikov, A. F.; Nikitina, E. V.; Kayander, I. N.; Ustinov, V. M.; Ledentsov, N. N.AbstractLaser diode structures on GaAs substrates with an active region employing laterally associated InAs quantum dots obtained by low-temperature MBE exhibit electroluminescence at a wavelength of 1.55-1.6 µm in a temperature range from 20 to 260 K.SubjectsDIODES; QUANTUM dots; ELECTROLUMINESCENCEPublicationTechnical Physics Letters, 2001, Vol 27, Issue 9, p734ISSN1063-7850Publication typeArticleDOI10.1134/1.1405243