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Thermodynamic properties of the trans-1,3,3,3-tetrafluoropropene refrigerant: a method for constructing the equation of state and the tabulated data.
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- Measurement Techniques, 2024, v. 66, n. 10, p. 765, doi. 10.1007/s11018-024-02290-5
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- Article
Unified Fundamental Equation of State of Argon: Construction Technique Within the Framework of Scaling Theory and Tables of Standard Reference Data.
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- Measurement Techniques, 2023, v. 65, n. 11, p. 793, doi. 10.1007/s11018-023-02153-5
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- Article
Thermodynamic Properties of R1233zd(E) Refrigerant: Method for Constructing the Fundamental Equation of State and Tabulated Data.
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- Measurement Techniques, 2022, v. 65, n. 5, p. 330, doi. 10.1007/s11018-022-02084-7
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Methodology for Constructing the Equation of State and Thermodynamic Tables for a New Generation Refrigerant.
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- Measurement Techniques, 2021, v. 64, n. 2, p. 86, doi. 10.1007/s11018-021-01901-9
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- Article
Oxidation of the zirconium boride-silicon nitride composite in the temperature range 1100–1300°C in air.
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- Glass Physics & Chemistry, 2010, v. 36, n. 2, p. 225, doi. 10.1134/S1087659610020112
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- Article
70th Birthday of Yuriı Fedorovich Smirnov.
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- Physics of Atomic Nuclei, 2005, v. 68, n. 9, p. 1616, doi. 10.1134/1.2053343
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- Article
Noise-induced synchronization of spatiotemporal chaos in the Ginzburg-Landau equation.
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- Journal of Experimental & Theoretical Physics, 2008, v. 107, n. 5, p. 899, doi. 10.1134/S1063776108110228
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- Article
Stochastic transport through complex comb structures.
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- Journal of Experimental & Theoretical Physics, 2008, v. 106, n. 5, p. 999, doi. 10.1134/S1063776108050178
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Generalized chaotic synchronization in coupled Ginzburg-Landau equations.
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- Journal of Experimental & Theoretical Physics, 2006, v. 103, n. 4, p. 654, doi. 10.1134/S1063776106100189
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- Article
Graphene layers fabricated from the Ni/a-SiC bilayer precursor.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 322
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- Article
Intermittent generalized synchronization in distributed autooscillatory media described by complex Ginzburg-Landau equations.
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- Technical Physics Letters, 2007, v. 33, n. 9, p. 788, doi. 10.1134/S1063785007090222
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Generalized synchronization in Ginzburg-Landau equations with local coupling.
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- Technical Physics Letters, 2006, v. 32, n. 7, p. 638, doi. 10.1134/S1063785006070261
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Generalized Synchronization in Autooscillatory Media.
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- Technical Physics Letters, 2005, v. 31, n. 11, p. 951, doi. 10.1134/1.2136962
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- Article
Spatiotemporal Chaos Synchronization in Beam–Plasma Systems with Supercritical Current.
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- Technical Physics Letters, 2005, v. 31, n. 3, p. 221, doi. 10.1134/1.1894438
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- Article
On the Mechanism of Electron Conductivity in Lanthanum Metaniobate.
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- Technical Physics Letters, 2002, v. 28, n. 10, p. 815, doi. 10.1134/1.1519016
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Chaotic Synchronization of Unidirectionally Coupled Electron-Wave Media with Interacting Counterpropagating Waves.
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- Technical Physics, 2005, v. 50, n. 4, p. 385, doi. 10.1134/1.1901774
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Extrusion of Mixtures for the Construction Industry by 3D Printing.
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- Russian Engineering Research, 2023, v. 43, n. 1, p. 107, doi. 10.3103/S1068798X23020168
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- Article
Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing.
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- Semiconductors, 2022, v. 56, n. 3, p. 223, doi. 10.1134/S1063782622020166
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- Article
Diffusion of Germanium from a Buried SiO<sub>2</sub> Layer and Formation of a SiGe Phase.
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- Semiconductors, 2022, v. 56, n. 3, p. 215, doi. 10.1134/S1063782622020154
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- Article
Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions.
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- Semiconductors, 2021, v. 55, n. 3, p. 289, doi. 10.1134/S1063782621030179
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- Article
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films.
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- Semiconductors, 2019, v. 53, n. 4, p. 493, doi. 10.1134/S1063782619040262
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Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining.
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- Semiconductors, 2019, v. 53, n. 1, p. 60, doi. 10.1134/S1063782619010238
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- Article
Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO<sub>2</sub> Surface Films.
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- Semiconductors, 2018, v. 52, n. 13, p. 1696, doi. 10.1134/S1063782618130055
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Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide.
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- Semiconductors, 2018, v. 52, n. 10, p. 1341, doi. 10.1134/S1063782618100160
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Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer.
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- Semiconductors, 2009, v. 43, n. 1, p. 52, doi. 10.1134/S1063782609010114
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- Article
Behavior of germanium ion-implanted into SiO<sub>2</sub> near the bonding interface of a silicon-on-insulator structure.
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- Semiconductors, 2007, v. 41, n. 3, p. 291, doi. 10.1134/S1063782607030104
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- Article
Traps with Near-Midgap Energies at the Bonded Si/SiO<sub>2</sub> Interface in Silicon-on-Insulator Structures.
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- Semiconductors, 2004, v. 38, n. 12, p. 1394, doi. 10.1134/1.1836059
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Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures.
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- Semiconductors, 2003, v. 37, n. 11, p. 1303, doi. 10.1134/1.1626213
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- Article
Hydrogen-Induced Splitting in Silicon over a Buried Layer Heavily Doped with Boron.
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- Semiconductors, 2003, v. 37, n. 6, p. 620, doi. 10.1134/1.1582524
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- Article
The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons.
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- Semiconductors, 2003, v. 37, n. 4, p. 426, doi. 10.1134/1.1568462
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Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields.
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- Semiconductors, 2002, v. 36, n. 7, p. 800, doi. 10.1134/1.1493752
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X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation.
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- Semiconductors, 2002, v. 36, n. 5, p. 568, doi. 10.1134/1.1478550
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Transformation of Interface States in Silicon-on-Insulator Structures under Annealing in Hydrogen Atmosphere.
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- Semiconductors, 2002, v. 36, n. 1, p. 60, doi. 10.1134/1.1434515
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Properties of Silicon-on-Insulator Structures and Devices.
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- Semiconductors, 2001, v. 35, n. 9, p. 1030, doi. 10.1134/1.1403567
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Switching Characteristics of Electron-Irradiated MOS-Controlled Thyristors.
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- Semiconductors, 2001, v. 35, n. 9, p. 1106, doi. 10.1134/1.1403576
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Interface States and Deep-Level Centers in Silicon-on-Insulator Structures.
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- Semiconductors, 2001, v. 35, n. 8, p. 912, doi. 10.1134/1.1393026
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- Article
Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation.
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- Semiconductors, 2000, v. 34, n. 9, p. 1054, doi. 10.1134/1.1309421
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Thermal Acceptors in Irradiated Silicon.
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- Semiconductors, 2000, v. 34, n. 2, p. 155
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Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment.
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- Semiconductors, 1999, v. 33, n. 10, p. 1049, doi. 10.1134/1.1187862
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Formation of oxygen precipitates in silicon.
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- Semiconductors, 1997, v. 31, n. 8, p. 852, doi. 10.1134/1.1187240
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FIELD EFFECT NANOTRANSISTOR ON ULTRATHIN SILICON-ON-INSULATOR.
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- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 155, doi. 10.1142/S0219581X04001936
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Thermal Expansion of Sm–Tb Orthoferrites in the Region of the Spin Reorientation Transition.
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- Crystallography Reports, 2000, v. 45, n. 2, p. 300, doi. 10.1134/1.171184
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Accelerator of the ??-12? neutron generator as an implanter of hydrogen ions.
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- Instruments & Experimental Techniques, 2005, v. 48, n. 1, p. 109, doi. 10.1007/s10786-005-0021-2
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- Article
Thermomigration Kinetics in the Si–Al–Ga and Si–Al–Sn Systems.
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- Inorganic Materials, 2018, v. 54, n. 1, p. 32, doi. 10.1134/S0020168518010065
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Electrical Resistivity of Stabilized Polycrystalline Intermetallide Ti<sub>67</sub>Al<sub>33</sub>.
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- High Temperature, 2022, v. 60, n. 2, p. 172, doi. 10.1134/S0018151X22020201
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Angular distributions of scattered excited muonic hydrogen atoms.
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- JETP Letters, 2006, v. 83, n. 7, p. 273, doi. 10.1134/S0021364006070034
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Coulomb Deexcitation of Muonic Hydrogen within the Quantum Close-Coupling Method.
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- JETP Letters, 2005, v. 81, n. 11, p. 543, doi. 10.1134/1.2029940
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- Article
Thermal Strain Effects in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>6+δ</sub> Superconductors.
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- Physica Status Solidi (B), 1994, v. 182, n. 1, p. 183, doi. 10.1002/pssb.2221820119
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Radiative Recombination at Centres in Germanium-Silicon Solid Solutions.
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- Physica Status Solidi (B), 1985, v. 129, n. 1, p. 313, doi. 10.1002/pssb.2221290131
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Thermal Expansion of Dilute Solid Solutions of Silver in Aluminium at Low Temperatures.
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- Physica Status Solidi (B), 1975, v. 71, n. 1, p. K95, doi. 10.1002/pssb.2220710163
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- Article