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Defect centers of rare-earth metals in a-Si(H).
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- Glass Physics & Chemistry, 2012, v. 38, n. 2, p. 228, doi. 10.1134/S1087659612020034
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- Article
The Absorption Spectra of Gallium Nitride Crystals Doped with Erbium Ions.
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- Technical Physics Letters, 2002, v. 28, n. 4, p. 270, doi. 10.1134/1.1476987
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- Article
LED Structures Based on ZnO Films Obtained by RF Magnetron Sputtering for the UV Spectral Range.
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- Technical Physics, 2020, v. 65, n. 3, p. 434, doi. 10.1134/S1063784220030159
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- Article
Influence of Silver and Gold Nanoparticles and Thin Layers on Charge Carrier Generation in InGaN/GaN Multiple Quantum Well Structures and Crystalline Zinc Oxide Films.
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- Technical Physics, 2018, v. 63, n. 4, p. 551, doi. 10.1134/S1063784218040151
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- Article
Photoinduced defects in a-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm.
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- Technical Physics, 2015, v. 60, n. 9, p. 1353, doi. 10.1134/S106378421509011X
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Setup for taking the radiation spectra of wideband semiconductors.
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- Technical Physics, 2011, v. 56, n. 9, p. 1297, doi. 10.1134/S1063784211090271
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- Article
Parameters of ZnO Semiconductor Films Doped with Mn and Fe 3d Impurities.
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- Semiconductors, 2020, v. 54, n. 1, p. 15, doi. 10.1134/S1063782620010145
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- Article
Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering.
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- Semiconductors, 2018, v. 52, n. 10, p. 1233, doi. 10.1134/S1063782618100123
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Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering.
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- Semiconductors, 2017, v. 51, n. 5, p. 559, doi. 10.1134/S1063782617050177
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UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities.
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- Semiconductors, 2016, v. 50, n. 10, p. 1304, doi. 10.1134/S106378261610016X
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Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods.
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- Semiconductors, 2015, v. 49, n. 11, p. 1473, doi. 10.1134/S1063782615110159
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- Article
Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er.
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- Semiconductors, 2015, v. 49, n. 8, p. 992, doi. 10.1134/S1063782615080138
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- Article
Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu)
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- Semiconductors, 2013, v. 47, n. 9, p. 1193, doi. 10.1134/S1063782613090157
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Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm.
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- Semiconductors, 2013, v. 47, n. 4, p. 501, doi. 10.1134/S1063782613040167
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Intensity of emission from intracenter 4 f-transitions in a-Si:H, ZnO, and GaN films doped with rare-earth ions.
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- Semiconductors, 2012, v. 46, n. 7, p. 901, doi. 10.1134/S1063782612070135
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Photoluminescence of nitro-substituted europium (III) phthalocyanines.
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- Semiconductors, 2010, v. 44, n. 8, p. 1070, doi. 10.1134/S1063782610080208
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The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.
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- Semiconductors, 2010, v. 44, n. 4, p. 426, doi. 10.1134/S1063782610040032
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- Article
Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm).
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- Semiconductors, 2010, v. 44, n. 3, p. 321, doi. 10.1134/S1063782610030097
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- Article
Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In<sub> x</sub>Ga<sub>1 − x</sub> N/GaN quantum wells.
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- Semiconductors, 2009, v. 43, n. 4, p. 447, doi. 10.1134/S1063782609040083
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- Article
Photoluminescence spectra of n-ZnO/ p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures.
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- Semiconductors, 2008, v. 42, n. 7, p. 766, doi. 10.1134/S1063782608070038
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- Article
Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities.
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- Semiconductors, 2008, v. 42, n. 2, p. 159, doi. 10.1134/S1063782608020073
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Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals.
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- Semiconductors, 2006, v. 40, n. 12, p. 1378, doi. 10.1134/S1063782606120025
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Sensitization of luminescence of wurtzite GaN crystals doped with Eu and the additionally introduced Zn impurity.
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- Semiconductors, 2006, v. 40, n. 9, p. 1007, doi. 10.1134/S106378260609003X
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- Article
Impurity Centers of Rare-Earth Ions (Eu, Sm, Er) in GaN Wurtzite Crystals.
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- Semiconductors, 2004, v. 38, n. 11, p. 1267, doi. 10.1134/1.1823057
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- Article
Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films.
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- Semiconductors, 2002, v. 36, n. 11, p. 1252, doi. 10.1134/1.1521226
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- Article
Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films.
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- Semiconductors, 2001, v. 35, n. 6, p. 684, doi. 10.1134/1.1379404
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- Article
Transformation of an Unordered Structural Network in Amorphous Hydrogenated Silicon Films as a Result of Doping with Boron.
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- Semiconductors, 2000, v. 34, n. 3, p. 348, doi. 10.1134/1.1187984
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- Article
Formation of optically active centers in films of erbium-doped amorphous hydrated silicon.
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- Semiconductors, 1999, v. 33, n. 10, p. 1145, doi. 10.1134/1.1187884
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Erbium impurity atoms in silicon
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- Semiconductors, 1998, v. 32, n. 6, p. 636, doi. 10.1134/1.1187454
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Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them
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- Semiconductors, 1998, v. 32, n. 5, p. 555, doi. 10.1134/1.1187437
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- Article
Intensity of visible and IR emission of intracenter 4 f transitions of RE ions in Er- and Tm-doped ZnO films with additional Ag, Li, and N impurities.
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- Optics & Spectroscopy, 2016, v. 121, n. 2, p. 220, doi. 10.1134/S0030400X16080154
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- Article
Emission from rare-earth ions in GaN wurtzite crystals.
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- Inorganic Materials, 2011, v. 47, n. 13, p. 1450, doi. 10.1134/S0020168511130048
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Nature of the Impurity States Arising from Transition Metals in Hydrogenated Amorphous Silicon.
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- Physica Status Solidi (B), 1989, v. 155, n. 2, p. K113, doi. 10.1002/pssb.2221550252
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Density of States and Photoconductivity of Hydrogenated Amorphous Silicon.
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- Physica Status Solidi (B), 1986, v. 138, n. 2, p. 647, doi. 10.1002/pssb.2221380229
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- Article