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- Title
Highly Hydrophobic and Chemically Rectifiable Surface-Anchored Metal-Organic Framework Thin-Film Devices.
- Authors
Rana, Shammi; Rajendra, Ranguwar; Dhara, Barun; Kumar Jha, Plawan; Ballav, Nirmalya
- Abstract
Functionalizing various surfaces with metal-organic frameworks (SURMOFs) are promising platforms for a variety of technological applications. Herein, liquid-phase epitaxy has been employed to grow oriented and uniform SURMOF thin-films of Cu ion and tetracyanoquinodimethane (TCNQ) ligand on self-assembled monolayer templates. The SURMOF thin-films of Cu-TCNQ on fluorine doped tin oxide, Au, and polyethyleneterephthalate substrates are realized to be highly hydrophobic exhibiting contact angle of water ≈140°. SURMOF thin-film devices of Cu-TCNQ have been fabricated by employing electron-beam lithography technique. Room-temperature current-voltage (I-V) characteristics consistently showed non-Ohmic semiconductivity in the range of ≈10-5 S cm-1. A remarkable rectification in the electrical conductance of SURMOF thin-film device with rectification factor of ≈100 was achieved upon exposing iodine (I2) vapor at ambient conditions whereas bulk-Cu-TCNQ remains nonrectified. Even, highly hydrophobic surface nature is retained in course of gaining electrical rectification. The unusual rectifying thin-film phenomenon induced by I2 is attributed to structural and electronic reorganization in the SURMOF and the rectification follows standard Shockley diode equation. The here presented results demonstrate a new avenue of research on MOFs where electronic and magnetic properties in particular can be efficiently explored and controlled in SURMOF thin-film device configurations (also mechanically flexible) for various technological applications.
- Subjects
METAL-organic frameworks; EPITAXY; THIN films; COPPER ions; TETRACYANOQUINODIMETHANE
- Publication
Advanced Materials Interfaces, 2016, Vol 3, Issue 13, p1
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.201500738