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- Title
In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor.
- Authors
Prall, Christoph; Kaspari, Christian; Knauer, Arne; Haberland, Kolja; Weyers, Markus; Rueter, Dirk
- Abstract
Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) have become important semiconductor materials for the LED lighting industry. Recently, a photoluminescence (PL) technique for direct in-situ characterization of GaN and InGaN layers during epitaxial growth in a planetarymetalorganic vapor phase epitaxy (MOVPE) reactor was reported. The PL signals reveal - at the earliest possible stage - information about current layer thickness, temperature, composition, surface roughness, and self-absorption. Thus, the PL data is valuable for both controlling and optimizing the growth parameters, thereby promising both better devices and a better yield for the LED industry. This technical report describes an extension of this PL technique to close coupled showerhead (CCS) reactors with narrow optical viewports. In contrast to the wide aperture optics in previous investigations, a compact and all-fiber optical probewithout voluminous lens optics, filter elements or beam splitters was used.
- Subjects
PHOTOLUMINESCENCE; LIGHT emitting diodes; GALLIUM nitride; LED lighting; VAPOR phase epitaxial growth
- Publication
Technisches Messen, 2017, Vol 84, Issue 11, p747
- ISSN
0171-8096
- Publication type
Article
- DOI
10.1515/teme-2017-0038