We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Resistive switching of IGZO-based memristors with electrode modulation and multi-value storage application.
- Authors
Wang, Xiongfeng; Bao, Guocheng; Chen, Xiaopei; Pang, Yudong; Liao, Wugang
- Abstract
This work investigates the resistive switching in InGaZnO (IGZO) memristors with different electrodes, including Cu, Au, Ag, and Ti. Cu electrode device possesses the lowest switching voltage, while Au electrode device exhibits a good endurance of 100 repeated cycling tests. Ag electrode device shows a mediocre performance. As for the Ti electrode device, it has a relatively larger on/off ratio but a highest switching voltage. Corresponding mechanisms for the current conduction are explored, and models based on the experimental results are proposed to explain the RS mechanisms. Additionally, multi-value storage potential of Cu electrode device is also investigated by varying compliance current.
- Subjects
ELECTRODE potential; COPPER; MEMRISTORS; HIGH voltages; CYCLING
- Publication
Applied Physics A: Materials Science & Processing, 2024, Vol 130, Issue 8, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-024-07760-9