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- Title
Development of extraction and optimization based large-signal models for thinned metamorphic high-electron mobility transistors on germanium.
- Authors
Schreurs, D.; Van Niekerk, C.; Vandersmissen, R.; Borghs, G.
- Abstract
HEMTs on germanium have the advantage that the substrate can be easily removed, which facilitates integration into low-cost MCM-D circuit implementations. Although germanium has (dispersive) characteristics similar to silicon, we show that the large-signal modeling of these thinned Ge based metamorphic high-electron mobility transistors (HEMTs) is similar to that of GaAs and InP HEMTs. Two types of look-up table based nonlinear models that are respectively based on direct extraction and optimization are developed and evaluated. © 2002 Wiley Periodicals, Inc. Int J RF and Microwave CAE 12, 439–447, 2002. Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mmce10042
- Subjects
MODULATION-doped field-effect transistors; GERMANIUM; MULTICHIP modules (Microelectronics); MICROWAVE integrated circuits; LINEAR accelerators; TRANSISTORS
- Publication
International Journal of RF & Microwave Computer-Aided Engineering, 2002, Vol 12, Issue 5, p439
- ISSN
1096-4290
- Publication type
Article
- DOI
10.1002/mmce.10042