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- Title
Photogalvanic effect in an asymmetric system of three quantum wells in a strong magnetic field.
- Authors
Omel’yanovskii, O. E.; Tsebro, V. I.; Kadushkin, V. I.
- Abstract
The photogalvanic effect (PGE) in an asymmetric undoped system of three GaAs/AlGaAs quantum wells illuminated with white light of various intensities is investigated in magnetic fields up to 75 kOe at temperatures ranging from 4.2 K up to 300 K. A maximum of the spontaneous photogalvanic current JPGE as a function of the magnetic field predicted by A. A. Gorbatsevich etal., JETP Lett. 57, 580 (1993), is observed. Analysis of the experimental data shows that the main initial characteristic of the PGE is not the spontaneous current but rather the electromotive force EPGE arising in the direction perpendicular to the applied magnetic field. It is determined that this emf is independent of the intensity of the incident light, increases linearly with the size d of the illuminated region, and decreases slowly with temperature: EmaxPGE∼0.8 V at 300 K and ∼0.1 V at 4.2 K for d∼3 mm. The curve EPGE(H) at room temperature is determined with allowance for the strong transverse magnetoresistance of the nanostructure. © 1996 American Institute of Physics.
- Subjects
QUANTUM wells; ASYMMETRY (Chemistry); PHOTOMECHANICAL processes; MAGNETIC fields
- Publication
JETP Letters, 1996, Vol 63, Issue 3, p209
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.567005