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- Title
Influence of Particle Velocity of Copper on Emitter Contact by Cold-Spray Method.
- Authors
Kang, Byungjun; Lee, Kyung; Choi, Jae-Wook; Lee, Hae-seok; Kim, Donghwan; Lee, Jong-gun; Yoon, Sam; Kang, Yoonmook
- Abstract
In this study, we investigated cold-sprayed copper as a front contact for crystalline silicon solar cells. Copper powder was deposited on a monocrystalline silicon wafer with variation of the particle velocity during deposition. The particle velocity was varied by varying the heating temperature from 250 to 400 °C using a gas pressure of 0.45 MPa. The particle velocities were calculated using empirical equations, and were found to increase with an increase in the carrier gas temperature. Grid patterns were formed on a phosphorus-doped n-type emitter of a p-type silicon substrate. The electrode thickness increased with increasing particle velocity. The electrical properties of the grids were evaluated using the transfer length method. The specific contact resistance of the n-type emitter was in the range of 2.6-26.4 mΩ-cm. Damage to the p- n junction was investigated via minority carrier lifetime measurement of the substrate. The copper-silicon interface was evaluated using transmission electron microscopy. The contact properties were affected by the interface conditions.
- Subjects
VELOCITY; ELECTROMETALLURGY of copper; PHYSIOLOGICAL effects of copper; SOLAR cell efficiency; ELECTRODE performance
- Publication
Journal of Thermal Spray Technology, 2016, Vol 25, Issue 3, p465
- ISSN
1059-9630
- Publication type
Article
- DOI
10.1007/s11666-015-0349-5