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- Title
The transparent Mg:NiO/SnO<sub>2</sub> pn junctions toward photovoltaic conversion enhancement via the potential regulation of Mg-doping.
- Authors
Shu, Tianyu; Lu, Lei; Xu, Yunlong; Li, Hang; Que, Lixin; Cao, Jun; Shi, Lei; Pan, Jiaqi; Li, Chaorong
- Abstract
The transparent Mg:NiO/SnO2 pn junction with potential regulation of Mg-doping has been fabricated via a co-sputtering method. The transparent Mg-doped NiO/SnO2 pn junction (2Mg:NiO/SnO2) exhibits highly transmittance of ~ 85%, photovoltaic conversion enhancement of ~ 3.5 × 103 folds than intrinsic NiO/SnO2 pn junction, and decent stability during 10 week's continuous cycle. It can be ascribed to the Mg-doping with potential regulation, carrier increasing and band gap extension, can optimize the photo-generated carrier concentration-mobility kinetic equilibrium efficiently to achieve a higher transparent photovoltaic conversion. Additionally, the high-quality pn junction can provide checkless interface for carrier transferring to increase photovoltaic conversion efficiency.
- Subjects
DOPING in sports; BAND gaps
- Publication
Journal of Materials Science: Materials in Electronics, 2023, Vol 34, Issue 5, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-022-09698-1