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- Title
Effect of Gallium Nitride Film Growth Conditions on Surface Segregation.
- Authors
Tomashpolsky, Yu. Ya.; Matyuk, V. M.; Sadovskaya, N. V.
- Abstract
The micro- and nanomorphology and local composition of gallium nitride (GaN) films produced by four different procedures have been studied with the aim of detecting autosegregation phenomena. As a result, a complex autosegregation picture has been demonstrated and discussed. Independent of the growth procedure, all of the gallium nitride films have nonstoichiometric chemical compositions (gallium deficiency), with a degree of nonstoichiometry ranging from ~0.30 to <0.10. We discuss the segregation mechanism, which presumably involves predominant selective diffusion of nitrogen atoms to the surface.
- Subjects
SURFACE segregation; GALLIUM nitride films; NONSTOICHIOMETRIC compounds; DIFFUSION; ATOMS
- Publication
Inorganic Materials, 2018, Vol 54, Issue 1, p26
- ISSN
0020-1685
- Publication type
Article
- DOI
10.1134/S0020168518010168