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- Title
Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide–Polysilicon Structures.
- Authors
Belorusov, D. A.; Goldman, E. I.; Chucheva, G. V.
- Abstract
Manifestation of the Franz–Keldysh effect was found under indirect daylight illumination of Al‒n+-Si:P–SiO2–(100) n-Si with ultrafine (3.7 nm) oxide. It is shown that the use of illumination even at low field voltages (up to 3 V) leads to an increase in the tunneling current through the oxide compared to the current in darkness by three orders of magnitude. A model is constructed for the influence of radiation on the process of electron tunneling through an ultrathin insulating layer. First, as a result of the Franz–Keldysh effect, a radiation quantum is captured by an electron and a given charge carrier tunnels through the barrier at a higher level compared to darkness. After a charge carrier enters a semiconductor, its energy is sufficient for several acts of electron–hole pair production during the impact ionization of silicon.
- Subjects
IMPACT ionization; DAYLIGHT; ELECTRON tunneling; PAIR production; ELECTRON capture; CHARGE carriers
- Publication
Journal of Communications Technology & Electronics, 2023, Vol 68, Issue 9, p1002
- ISSN
1064-2269
- Publication type
Article
- DOI
10.1134/S1064226923090036