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- Title
CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/-GaAs SCHOTTKY CONTACTS.
- Authors
YILDIRIM, NEZIR; TURUT, ABDULMECIT; DOGAN, HULYA
- Abstract
The Schottky barrier type Ni/-GaAs contacts fabricated by us were thermally annealed at 600C and 700C for 1min. The apparent barrier height and ideality factor of the diodes were calculated from the forward bias current-voltage characteristic in 60-320K range. The values for the nonannealed and 600C and 700C annealed diodes were obtained as 0.80, 0.81 and 0.67eV at 300K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the versus plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.
- Subjects
CURRENT-voltage characteristics; SCHOTTKY barrier; ANNEALING of metals; GALLIUM arsenide semiconductors; DIODES
- Publication
Surface Review & Letters, 2018, Vol 25, Issue 4, p-1
- ISSN
0218-625X
- Publication type
Article
- DOI
10.1142/S0218625X18500828