Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleEffects of gate stack structural and process defectivity on high-k dielectric dependence of NBTI reliability in 32 nm technology node PMOSFETs.AuthorsHussin, H; Soin, N; Bukhori, M F; Wan Muhamad Hatta, S; Abdul Wahab, Y; Hatta, S Wan Muhamad; Wahab, Y AbdulPublicationScientific World Journal, 2014, p490829ISSN1537-744XPublication typejournal articleDOI10.1155/2014/490829