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- Title
Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN.
- Authors
Schmehl, Andreas; Vaithyanathan, Venu; Herrnberger, Alexander; Thiel, Stefan; Richter, Christoph; Liberati, Marco; Heeg, Tassilo; Röckerath, Martin; Kourkoutis, Lena Fitting; Mühlbauer, Sebastian; Böni, Peter; Muller, David A.; Barash, Yuri; Schubert, Jürgen; Idzerda, Yves; Mannhart, Jochen; Schlom, Darrell G.
- Abstract
Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semiconductors silicon and GaN, using methods that transcend these difficulties. Andreev reflection measurements reveal that the spin polarization in doped epitaxial EuO films exceeds 90%, demonstrating that EuO is a half-metal even when highly doped. Furthermore, EuO is epitaxially integrated with silicon and GaN. These results demonstrate the high potential of EuO for spintronic devices.
- Subjects
EPITAXY; CRYSTAL growth; MOLECULAR beam epitaxy; FERROMAGNETIC materials; FERROMAGNETISM; MAGNETIC materials; SEMICONDUCTORS
- Publication
Nature Materials, 2007, Vol 6, Issue 11, p882
- ISSN
1476-1122
- Publication type
Article
- DOI
10.1038/nmat2012