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The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 254, doi. 10.1134/S1063782624030126
By:
- Protasov, D. Yu.;
- Kamesh, P. P.;
- Svit, K. A.;
- Dmitriev, D. V.;
- Makeeva, A. A.;
- Rzaev, E. M.;
- Zhuravlev, K. S.
Publication type:
Article
Nonmonotonic behavior of magnetophotoconductivity in p-CdHgTe.
Published in:
Semiconductors, 2006, v. 40, n. 6, p. 642, doi. 10.1134/S1063782606060054
By:
- Protasov, D. Yu.;
- Kostyuchenko, V. Ya.;
- Ovsyuk, V. N.
Publication type:
Article
Mobility of Minority Charge Carriers in p-HgCdTe Films.
Published in:
Semiconductors, 2004, v. 38, n. 5, p. 514, doi. 10.1134/1.1755881
By:
- Varavin, V. S.;
- Dvoretsk&icaron;, S. A.;
- Kostyuchenko, V. Ya;
- Ovsyuk, V. N.;
- Protasov, D. Yu
Publication type:
Article
Forming n-p junctions based on p-CdHgTe with low charge carrier density.
Published in:
Technical Physics Letters, 2006, v. 32, n. 9, p. 802, doi. 10.1134/S1063785006090203
By:
- Vasil’ev, V. V.;
- Dvoretskiĭ, S. A.;
- Mikhaĭlov, N. N.;
- Protasov, D. Yu.;
- Smirnov, R. N.
Publication type:
Article
GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters.
Published in:
Technical Physics, 2024, v. 69, n. 2, p. 249, doi. 10.1134/S106378422401016X
By:
- Gulyaev, D. V.;
- Dmitriev, D. V.;
- Fateev, N. V.;
- Protasov, D. Yu.;
- Kozhukhov, A. S.;
- Zhuravlev, K. S.
Publication type:
Article
AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy.
Published in:
Technical Physics Letters, 2020, v. 46, n. 2, p. 154, doi. 10.1134/S1063785020020285
By:
- Sukhanov, M. A.;
- Bakarov, A. K.;
- Protasov, D. Yu.;
- Zhuravlev, K. S.
Publication type:
Article
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors.
Published in:
Technical Physics Letters, 2019, v. 45, n. 8, p. 761, doi. 10.1134/S1063785019080108
By:
- Malin, T. V.;
- Milakhin, D. S.;
- Aleksandrov, I. A.;
- Zemlyakov, V. E.;
- Egorkin, V. I.;
- Zaitsev, A. A.;
- Protasov, D. Yu.;
- Kozhukhov, A. S.;
- Ber, B. Ya.;
- Kazantsev, D. Yu.;
- Mansurov, V. G.;
- Zhuravlev, K. S.
Publication type:
Article
Increasing Saturated Electron-Drift Velocity in Donor-Acceptor Doped pHEMT Heterostructures.
Published in:
Technical Physics Letters, 2018, v. 44, n. 3, p. 260, doi. 10.1134/S1063785018030240
By:
- Protasov, D. Yu.;
- Gulyaev, D. V.;
- Bakarov, A. K.;
- Toropov, A. I.;
- Erofeev, E. V.;
- Zhuravlev, K. S.
Publication type:
Article
Determining the normal and lateral dark current components in n-p photodiodes based on p-Cd xHg1 − xTe heteroepitaxial structures with x = 0.22.
Published in:
Technical Physics Letters, 2009, v. 35, n. 6, p. 552, doi. 10.1134/S1063785009060200
By:
- Protasov, D. Yu.;
- Kostyuchenko, V. Ya.;
- Pavlov, A. V.;
- Vasil'ev, V. V.;
- Dvoretskii, S. A.;
- Varavin, V. S.;
- Mikhailov, N. N.
Publication type:
Article
Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov - de Haas Oscillation Method.
Published in:
Russian Physics Journal, 2018, v. 61, n. 7, p. 1202, doi. 10.1007/s11182-018-1518-z
By:
- Protasov, D. Yu.;
- Bakarov, A. K.;
- Toropov, A. I.;
- Kostyuchenko, V. Ya.;
- Klimov, A. É.;
- Zhuravlev, K. S.
Publication type:
Article

Found: 10

The Electrochemical Profiling of n<sup>+</sup>/n GaAs Structures for Field-Effect Transistors.

Nonmonotonic behavior of magnetophotoconductivity in p-CdHgTe.

Mobility of Minority Charge Carriers in p-HgCdTe Films.

Forming n-p junctions based on p-CdHgTe with low charge carrier density.

GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters.

AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy.

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors.

Increasing Saturated Electron-Drift Velocity in Donor-Acceptor Doped pHEMT Heterostructures.

Determining the normal and lateral dark current components in n-p photodiodes based on p-Cd<sub> x</sub>Hg<sub>1 − x</sub>Te heteroepitaxial structures with x = 0.22.

Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov - de Haas Oscillation Method.