We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Structure and photoelectric properties of SiSn epilayers.
- Authors
Saidov, A. S.; Usmonov, Sh. N.; Kalanov, M.; Madaminov, Kh. M.
- Abstract
Epitaxial layers of n-type SiSn x (0 ≤ x ≤ 0.04) solid solution were grown by liquid phase epitaxy from tin-based solution melt confined between two horizontal Si(111) single crystal silicon substrates. The structure of epilayers was determined and the photosensitivity spectra of pSi- nSiSn x (0 ≤ x ≤ 0.04) structures were studied at various temperatures. It is established that SiSn films have a perfect single crystal structure with (111) orientation and a subgrain size of 60 nm. The photosensitivity edge of the pSi- nSiSn structure is shifted to longer wavelengths as compared to that of the pSi- nSi structure. The photosensitivity of the pSi- nSiSn structure in the impurity absorption range depends on the temperature.
- Subjects
SILICON; TIN; EPITAXY; CRYSTAL growth; PHOTOELECTRICITY
- Publication
Technical Physics Letters, 2010, Vol 36, Issue 9, p827
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785010090154