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- Title
Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method.
- Authors
Shin, Hyeonwoo; Roh, Jeongkyun; Song, Jiyoung; Roh, Heebum; Kang, Chan‐Mo; Lee, Taesoo; Park, Gunbaek; An, Kunsik; Kim, Jun Young; Kim, Hyoseok; Kwak, Jeonghun; Lee, Changhee; Kim, Hyeok
- Abstract
In this work, operationally and mechanically stable organic field‐effect transistors (OFETs) are demonstrated on aramid fiber‐based paper enabled by a simple and universal surface planarization method. By employing a nanoimprint lithography‐inspired surface smoothening method, rough aramid paper is successfully smoothened from a scale of several tens of micrometers to a sub‐nanometer‐scale surface roughness. Owing to the sub‐nanometer‐scale surface roughness of the aramid paper, the OFETs fabricated on the aramid paper exhibit decent field‐effect mobility (0.25 cm2 V−1 s−1) with a high current on‐to‐off ratio (>107), both of which are comparable with those of OFETs fabricated on rigid silicon substrates. Moreover, the OFETs fabricated on the aramid paper exhibit both high operational and mechanical stability; this is indicated by a bias‐stress‐induced threshold voltage shift (∆VTH ≈ 4.27 V under an excessive gate bias stress of 1.7 MV cm−1 for 1 h 30 min) comparable to that of OFETs on a rigid silicon substrate, moderate field‐effect mobility, and a threshold voltage stability under 1000 bending cycles with a compressive strain of 1%. The demonstration of highly stable OFETs on paper enabled by the simple planarization method will expand the potential use of various types of paper in electronic applications.
- Subjects
THIN film transistors; ORGANIC field-effect transistors; TRANSISTORS; ELECTRONIC paper; THRESHOLD voltage; SURFACE roughness
- Publication
Advanced Materials Interfaces, 2019, Vol 6, Issue 8, pN.PAG
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.201801731