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- Title
Electronic Structure and Charge-Trapping Characteristics of the AlO-TiAlO-SiO Gate Stack for Nonvolatile Memory Applications.
- Authors
Xu, Wenchao; Zhang, Yang; Tang, Zhenjie; Shao, Zhengjie; Zhou, Guofu; Qin, Minghui; Zeng, Min; Wu, Sujuan; Zhang, Zhang; Gao, Jinwei; Lu, Xubing; Liu, Junming
- Abstract
In this work, high- k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed AlO-TiAlO-SiO dielectric stack demonstrates significant memory effects and excellent reliability properties. The memory device exhibits a large memory window of ~2.6 V under ±8 V sweeping voltage, and it shows only ~14% charge loss after more than 10 years' retention, indicating excellent charge retention properties. The electronic structures of the AlO-TiAlO-SiO have been studied by X-ray photoelectron spectroscopy measurements, and it reveals that the quantum well and the defect traps in TiAlO film can provide a >1.8 eV deep barrier for charge confinement in the TiAlO layer. The mixing between AlO and TiO can increase the defects related to the under-coordinated Ti atoms, thereby enhancing the charge-trapping efficiency of the device. Our work implies that high- k TiAlO composite film is promising for applications in future nonvolatile charge-trapping memories.
- Subjects
ALUMINUM oxide; ELECTRONIC structure; NONVOLATILE memory; DIELECTRIC devices; COMPOSITE materials
- Publication
Nanoscale Research Letters, 2017, Vol 12, Issue 1, p1
- ISSN
1931-7573
- Publication type
Article
- DOI
10.1186/s11671-017-2040-x