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- Title
Growth of silicon nanowires by sputtering and evaporation methods.
- Authors
Nguyen, Thuy Thi; Vuong, Anh Xuan; Mai, Luan Duc; Nguyen, Tuan Hoang; Nguyen, Tu; Nguyen, Chien Duc; Nguyen, Lam Huu
- Abstract
Silicon nanowires (Si NWs) were fabricated on Si (111) surfaces using both magnetron sputtering and thermal evaporation methods. Au thin layers were deposited using the electron-beam (e-beam) evaporation method and used as metal catalysts. The Au particles were formed by annealing at high temperature; their dimensions depended on the Au layer thickness and affected the formation and dimension of Si NWs. Field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. Photoluminescence (PL) measurement was conducted to demonstrate the quantum confinement effect of the Si NWs.
- Subjects
SILICON nanowires; MAGNETRON sputtering; EVAPORATION (Chemistry); FIELD emission electron microscopy; SOLID state physics
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2013, Vol 210, Issue 7, p1429
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201228730