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- Title
Ar GAS FLOW RATE INFLUNCEMENT ON THE STRUCTURE PROPERTIES AND ELECTRICAL BEHAVIOR OF NEW SENSING MEMBRANE ZnO/CU/ZnO (ZCZ) EXTENDED GATE FIELD EFFECT TRANSISTOR (EG-FET).
- Authors
RASHEED, H. S.; AHMED, N. M.; MATJAFRI, M. Z.; KABAA, E. A.
- Abstract
In the last three decades, It has been proposed Zinc Oxide (ZnO) at the in front of metal oxide semiconductors to be used in various ions detection fields. This is due to its distinctive properties. ZnO/Cu/ZnO(ZCZ) multilayers structures as an extended gate were deposit on glass substrate using RF and DC magnetron sputtering at different ratio of Ar gas sputtering (6,12) sccm, XRD and AFM results were used to analysis the structural properties of multilayers. The average roughness of multilayer surface at Ar ratio 6sccm =0.55 nm less than multilayer film at 12 sccm. The pH sensitivity was calculated and found 30 mV/pH, 0.52 (µA)1/2/pH for new sensing membrane multilayer at Ar =6sccm best than multilayer deposit at gas sputtering 12 sccm which had the value 25 mV/pH, 0.35 (µA)1/2/pH this study focusing on the relation between the Ar gas flow rate with roughness and the electrical behavior represented by pH sensitivity, hysteresis voltage) as EGFET pH sensing membrane.
- Subjects
FIELD-effect transistors; GAS flow; ARGON; CRYSTAL structure; ARTIFICIAL membranes; ELECTRIC properties of zinc oxide; METAL oxide semiconductors
- Publication
Digest Journal of Nanomaterials & Biostructures (DJNB), 2017, Vol 12, Issue 4, p1119
- ISSN
1842-3582
- Publication type
Article